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2SK3673-01MR
FUJI POWER MOSFET
200304
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
TO-220F
Super FAP-G Series
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25C unless otherwise specified)
Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Isolation Voltage Symbol VDS VDSX *5 ID ID(puls] VGS IAR *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25C Tc=25C Tch Tstg Viso *6 Ratings 700 700 10 40 30 10 242.2 40 5 2.16 80 +150 -55 to +150 2 Unit V V A A V A mJ kV/s kV/s W C C kVrms
Equivalent circuit schematic
Drain(D)
Gate(G) Source(S)
< *1 L=4.45mH, Vcc=70V,Tch=25C, See to Avalanche Energy Graph *2 Tch=150C < < <700V *5 VGS=-30V *6 t=60sec, f=60Hz < *3 IF=-ID, -di/dt=50A/s, Vcc=BVDSS, Tch=150C *4 VDS =
Electrical characteristics (Tc =25C unless otherwise specified)
Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr Test Conditions ID=250A VGS=0V ID= 250A VDS=VGS VDS=700V VGS=0V Tch=25C Tch=125C VDS=560V VGS=0V VGS=30V VDS=0V ID=5A VGS=10V ID=5A VDS=25V VDS=25V VGS=0V f=1MHz VCC=300V ID=5A VGS=10V RGS=10 VCC=350V ID=10A VGS=10V L=4.45mH Tch=25C IF=10A VGS=0V Tch=25C IF=10A VGS=0V -di/dt=100A/s Tch=25C
Min.
700 3.0
Typ.
Max.
5.0 25 250 100 1.18
Units
V V A nA S pF
5
0.91 9.5 900 1350 140 210 8 12 22 33 6 9 40 60 9 14 25 37.5 4 6 8.5 13 10 0.90 2.75 14.0
ns
nC
1.50
A V s C
Thermalcharacteristics
Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient
Min.
Typ.
Max.
1.563 58.0
Units
C/W C/W
1
2SK3673-01MR
Characteristics
FUJI POWER MOSFET
120
Allowable Power Dissipation PD=f(Tc)
16
Typical Output Characteristics ID=f(VDS):80 s pulse test,Tch=25C
20V 10V 8.0V 7.0V
100 12 80
6.5V
PD [W]
60
ID [A]
8
40 4 20
6.0V
VGS=5.5V 0 0 25 50 75 100 125 150 0 0 5 10 15 20 25
Tc [C]
VDS [V]
Typical Transfer Characteristic ID=f(VGS):80 s pulse test,VDS=25V,Tch=25C
10
100
Typical Transconductance gfs=f(ID):80 s pulse test,VDS=25V,Tch=25C
ID[A]
1
gfs [S]
10
0.1
1
0
1
2
3
4
5
6
7
8
9
10
0.1
1
10
VGS[V]
ID [A]
2.00
Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 s pulse test,Tch=25C
VGS=5.5V 6.0V 6.5V
4.0
Drain-Source On-state Resistance RDS(on)=f(Tch):ID=5A,VGS=10V
3.5
1.75 3.0
RDS(on) [ ]
RDS(on) [ ]
2.5
1.50
7.0V 8.0V 10V 20V
2.0 max. 1.5 typ. 1.0
1.25
1.00 0.5
0.75 0 4 8 12 16
0.0 -50 -25 0 25 50 75 100 125 150
ID [A]
Tch [C]
2
2SK3673-01MR
FUJI POWER MOSFET
7.0 6.5 6.0 5.5 5.0
Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250A
12
Typical Gate Charge Characteristics VGS=f(Qg):ID=10A,Tch=25C
10 max. 8
Vcc= 140V 350V 560V
VGS(th) [V]
4.5
VGS [V]
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 min.
6
4
2
0 0 5 10 15 20 25 30
Tch [C]
Qg [nC]
10
1
Typical Capacitance C=f(VDS):VGS=0V,f=1MHz
100
Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 s pulse test,Tch=25C
Ciss 10
0
10
C [nF]
10
-1
Coss
IF [A]
1 0.1 0.00
10
-2
Crss 10
-3
10
0
10
1
10
2
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
VDS [V]
VSD [V]
10
3
Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=10
700
Maximum Avalanche Energy vs. starting Tch E(AS)=f(starting Tch):Vcc=70V
IAS=4A
600 tf 500 10
2
td(off)
IAS=6A
EAS [mJ]
400
t [ns]
td(on) 10
1
300 IAS=10A 200
tr
100
10
0
0
-1
10
10
0
10
1
0
25
50
75
100
125
150
ID [A]
starting Tch [C]
3
2SK3673-01MR
FUJI POWER MOSFET
10
2
Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25C,Vcc=70V
Avalanche Current I AV [A]
Single Pulse 10
1
10
0
10
-1
10 -8 10
-2
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
tAV [sec]
10
1
Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0
10
0
Zth(ch-c) [ C/W]
10
-1
10
-2
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t [sec]
http://www.fujielectric.co.jp/denshi/scd/
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